Process Hierarchy

on front
  Low-stress silicon nitride LPCVD ( <200 MPa)
  1.2 HCl bath
  1.3 50:1 HF dip
Materialsilicon nitrideRefractive index2.1 .. 2.3Residual stress150 .. 200 MPa
Thickness0.01 .. 5 µm
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0 .. 2 µm
0 .. 2 µm
Material silicon nitride
Refractive index 2.1 .. 2.3
Residual stress 150 .. 200 MPa
Temperature 850 °C
Wafer size
Wafer size