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Silicon nitride PECVD (PlasmaTherm 790+): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Silicon nitride PECVD (PlasmaTherm 790+)
on front
1
Silicon Nitride PECVD PlasmaTherm 790+
Material
silicon nitride
Refractive index
2.15
2
Spectroscopic Ellipsometric Single Point Film Thickness Measurement
Refractive index
1 .. 4
Thickness
0.01 .. 2 µm
Process characteristics:
Perform RTA
Perform RTA
*
yes
no
Perform thickness metrology
Select one of the options presented here
Perform thickness metrology
*
multi-point spectroscopic ellipsometry
none
single-point spectroscopic ellipsometry
Select one of the options presented here
Thickness
Amount of material added to a wafer
Thickness
*
µm
nm
Amount of material added to a wafer, must be 0 .. 0.5 µm
0 .. 0.5 µm
Material
silicon nitride
Wafer size
Wafer size
50 mm
75 mm
100 mm
150 mm