Process Hierarchy

on front
  Low-stress silicon nitride LPCVD (<50 MPa)
  1.2 10:1 HF dip
Materialsilicon nitrideRefractive index2.1 .. 2.3Residual stress0 .. 50 MPa
Refractive index1 .. 4Thickness0 .. 50 µm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Batch sizes 100 mm: 24
Excluded materials gold
Material silicon nitride
Residual stress 0 .. 50 MPa
Wafer size
Wafer size
Comments:
  • DCS/NH3 ratio is 6:1.
  • This recipe is available for 4" wafers only!