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About MEMS
Anodic bonding (air, with alignment): View
Process Hierarchy
Bonding
Anodic bonding
Fusion bonding
Glass frit bonding
Miscellaneous bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Anodic bonding (air, with alignment)
1
Piranha clean (non-MOS clean)
on front
2
Contact alignment (ABM)
3
Anodic bonding (air, with alignment)
Process characteristics:
Alignment type
Optical implies front-front align.
Backside IR implies front-back align.
Manual implies no fine alignment.
Alignment type
*
backside IR
manual
optical
Optical implies front-front align. Backside IR implies front-back align. Manual implies no fine alignment.
Perform piranha clean
If there are no metal parts on any of the wafers select standard piranha clean, otherwise an organic NMP clean will be performed.
Perform piranha clean
*
yes
no
If there are no metal parts on any of the wafers select standard piranha clean, otherwise an organic NMP clean will be performed.
Alignment tolerance
Registration of CAD data to features on wafer
5 .. 8 µm
Ambient
Ambient to which substrate is exposed during processing
air
Batch size
2
Bonded materials
Pair of materials bonded by this process
glass (Hoya), Pyrex (Corning 7740), silicon
Pressure
Pressure of process chamber during processing
1 atm
Wafer size
Wafer size
25 mm
50 mm
75 mm
100 mm
Comments:
1" to 4" diameter substrates.