Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Nanogetter packaging Down
  1 Silicon Cap wafer preparation
on front
  2 NanoGetter deposition and patterning
  2.1 Shadow mask-making
on front
  2.2 NanoGetter sputter deposition
  3 Fusion bonding with alignment Down
  3.1 pre-fusion-bond clean
  3.2 Fusion pre-bonding
  3.3 Nitrogen anneal
Process characteristics:
Bonding Method
Wafer bonding method to be used
Bonding Method*
Wafer bonding method to be used
Capping material
Capping material
Capping material*
Capping material
Cavity etch
For an etch of cavity in the capping wafer if needed.
Cavity etch*
yes no
For an etch of cavity in the capping wafer if needed.
Depth
Depth of etch in capping wafer
Depth*
Depth of etch in capping wafer, must be 10 .. 550 µm
10 .. 550 µm
Thickness
Thickness of the NanoGetter to be deposited.
Thickness*
Thickness of the NanoGetter to be deposited., must be 5 .. 500 nm
5 .. 500 nm
Through wafer etch
For electrical connections through the capping substrate
Through wafer etch*
yes no
For electrical connections through the capping substrate
Wafer size
Wafer size
Comments:
  • This the complete module for packaging and activation of NanoGetters in a sealed cavity along with MEMS devices.
  • Due to complexity of this process and availability of several options, please contact us for more detail.
  • This module and component descriptions may not be accurate.
Attachments
NanoGetters.ppt (860.0 KB, application/vnd.ms-powerpoint)
attached by ozgur (Mehmet Ozgur) on 2005-09-26 18:31