Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Wet oxidation
  1 Piranha Clean
  2 HF etch (10:1)
  3 Wet Thermal Oxidation
on front
  4 Spectrophotometric film thickness measurement
Process characteristics:
Perform clean
Perform clean*
yes no
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 6 µm
0.1 .. 6 µm
Batch size 50
Excluded materials gold (category), copper
Material silicon dioxide
Sides processed both
Uniformity -0.02 .. 0.02
Wafer size
Wafer size
Extra terms
No materials with Gold contamination will be processed at this fab site. Certain services (for example, oxidation, diffusion, and sputter deposition) will be provided if wafers are virgin, or all pre-processing steps have been performed at this fab site.