Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  4X Projection photolithography
on front
  1 Photoresist coat (AZ HiR 1075)
  2 4X align and exposure
  3 Photoresist develop
on front
  4 SEM analysis
Process characteristics:
Perform edge bead removal
Perform edge bead removal*
yes no
Perform hardbake
Perform hardbake*
Perform sem sample analysis
Two measurement per wafer.
This is an 30mins SEM inspection step.
Perform sem sample analysis*
yes no
Two measurement per wafer. This is an 30mins SEM inspection step.
Resist thickness
Resist thickness*
Alignment tolerance
Registration of CAD data to features on wafer
 0.15 µm
Alignment type
Method used to align materials to be bonded.
 front-front
Batch size 1
Magnification 1
Min feature size 0.5 µm
Wafer size
Wafer size