Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Phosphorus diffusion (POCl3)
  1 RCA1 clean
  2 HF dip
  3 Phosphorus diffusion (POCl3)
  4 Furnace anneal (Nitrogen)
  5 Buffered Oxide Etch (BOE)
on front
  6 Sheet resistance measurement
Process characteristics:
Perform clean
Perform clean*
yes no
Sheet resistance
Sheet resistance*
must be 10 .. 100 Ω/square
10 .. 100 Ω/square
Anneal duration 60 min
Anneal temperature 1000 °C
Wafer size
Wafer size