Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Doped poly-SiC LPCVD
  1 Piranha/HF clean
  1.1 Piranha clean (MOS-clean)
  1.2 10:1 HF dip
  2 Doped poly-SiC LPCVD
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  3 Spectrophotometric film thickness measurement
Refractive index1 .. 4Thickness0 .. 50 µm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 0.5 µm
0 .. 0.5 µm
Batch sizes 100 mm: 24, 150 mm: 10
Excluded materials gold, aluminum
Material poly-SiC
Wafer size
Wafer size
Comments:
  • N doped.
  • All metals, except refractory metals with melting point above 1500C excluded.