Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Dry oxidation (metal)
  1 Clean (metal)
  2 Dry oxidation (metal)
Materialsilicon dioxide
on front
  3 Spectrophotometric film thickness measurement #1
Refractive index0 .. 4Thickness0.005 .. 50 µm
Process characteristics:
Thickness
Thickness of grown film.
Thickness*
Thickness of grown film., must be 0 .. 0.5 µm
0 .. 0.5 µm
Material silicon dioxide
Temperature 1100 °C
Wafer size
Wafer size