Process Hierarchy

on front
  Dry oxidation (metal)
Materialsilicon dioxide
Refractive index0 .. 4Thickness0.005 .. 50 µm
Process characteristics:
Thickness
Thickness of grown film.
Thickness*
Thickness of grown film., must be 0 .. 0.5 µm
0 .. 0.5 µm
Material silicon dioxide
Temperature 1100 °C
Wafer size
Wafer size