Process Hierarchy

on front
  Contact G-line photolithography (front-back align, OCG 825 35CS)
  2 HMDS prime
MaterialHMDS
MaterialOCG 825 35CS
on front
  4 Photoresist softbake
Materialphotoresist (category)
on front
  6 Contact G-line exposure
MaterialOCG 825 35CS
MaterialOCG 825 35CS
on front
  8 Microscope inspection
on front
  9 UV bake
Process characteristics:
Perform deep uv bake
Perform deep uv bake*
yes no
Resist thickness
Resist thickness*
Batch size 12
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
line
Field geometry
Shape of field with dimensions characterized by the maximum field size
circle
Magnification 1
Material OCG 825 35CS
Max field size 150 mm
Min feature size 5 µm
Wafer size
Wafer size
Comments: