Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  10X G-line photolithography (Shipley SPR 220-7) Down
  1 Dehydration bake
  2 HMDS prime
MaterialHMDS
on front
  3 Photoresist coat (Shipley 220)
Thickness10 µm
on front
  4 Photoresist softbake
on front
  5 Stepper front-front alignment Down
on front
  6 10X stepper G-line exposure Down
on front
  7 Photoresist develop (Shipley 220)
on front
  8 Microscope inspection
Batch size 1
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
 line
Field geometry
Shape of field with dimensions characterized by the maximum field size
 square
Magnification 10
Material Shipley SPR220-7
Max field size 10 mm
Min feature size 8 µm
Resist thickness 10 µm
Wafer size
Wafer size