on front 10X G-line photolithography (OCG 825 35CS) Down |
| |
| |
| |
Material | photoresist (category) |
| | |
| |
| | |
| |
Process characteristics: |
Perform deep uv bake |
|
Resist thickness |
|
Batch size |
12 |
Feature geometry Shape of feature with dimensions characterized by the minimum feature size |
line |
Field geometry Shape of field with dimensions characterized by the maximum field size |
square |
Magnification |
10 |
Material |
OCG 825 35CS |
Max field size |
10 mm |
Min feature size |
2 µm |
Wafer size |
|
|
Comments: |
|